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Journal of Advanced Dielectrics, Volume. 15, Issue 1, 2450009(2025)

Thin film field-effect transistor with ZnO:Li ferroelectric channel

Armen Poghosyan*... Ruben Hovsepyan and Hrachya Mnatsakanyan |Show fewer author(s)
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  • Institute for Physical Research, Ashtarak 0203, Armenia
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    Armen Poghosyan, Ruben Hovsepyan, Hrachya Mnatsakanyan. Thin film field-effect transistor with ZnO:Li ferroelectric channel[J]. Journal of Advanced Dielectrics, 2025, 15(1): 2450009

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    Paper Information

    Category: Research Articles

    Received: Dec. 24, 2023

    Accepted: Apr. 28, 2024

    Published Online: Feb. 18, 2025

    The Author Email: Poghosyan Armen (apoghosyanipr@gmail.com)

    DOI:10.1142/S2010135X24500097

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology