Chinese Journal of Quantum Electronics, Volume. 20, Issue 3, 345(2003)

Quantum Confinement Effect on PL Spectrum of InGaAs/AlGaAs Multi-quantum Wells

[in Chinese]1... [in Chinese]1,2, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1,2, [in Chinese]1,2 and [in Chinese]2 |Show fewer author(s)
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    References(3)

    [1] [1] Chang K H, Bhattacharya P K, Gibala R. Transmission electron microscopy of strained InyGa1-yAs/GaAs multiquantum wells: The generation of misfit dislocations [J]. Appl. Phys., 1989, 65(9): 3391-3394

    [4] [4] Wang C A. New materials for diode laser pumping of solid-state lasers [J]. IEEE J. QE., 1992, 28(4): 942-951

    [5] [5] Madelung O. Landolt-Bornstein Numerical Data and Functional Relationships in Science and Technology [M]. Ⅲ /17a. Berlin: Springer, 1982

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Quantum Confinement Effect on PL Spectrum of InGaAs/AlGaAs Multi-quantum Wells[J]. Chinese Journal of Quantum Electronics, 2003, 20(3): 345

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    Paper Information

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    Received: May. 27, 2002

    Accepted: --

    Published Online: May. 15, 2006

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