Optics and Precision Engineering, Volume. 30, Issue 13, 1582(2022)

Optimization of sensitivity of MEMS micro-pressure sensor

Shiqiu PENG* and Saining ZHU
Author Affiliations
  • Wuxi KI Electronics Co., Ltd., Wuxi214000, China
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    Figures & Tables(15)
    Circuit structure of Wheatstone bridge
    Modeling of sensitive film
    Relationship between output voltage and film thickness
    Stress distribution chart
    Relationship between output voltage and location of varistor
    Relationship between output voltage and length of varistor
    Layout of pressure sensor
    Fabrication process flow of chip
    Picture of chip
    Picture of packaged pressure sensor
    Schematic diagram of pressure sensor
    Output curves of pressure sensor at different temperatures
    • Table 1. Optimized structural parameters of varistor

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      Table 1. Optimized structural parameters of varistor

      参 数设计数值/μm
      压敏膜厚度15
      压敏电阻长度120
      电阻宽度10
      电阻距敏感膜边缘间距10
    • Table 2. Actual values of pressure sensor chip

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      Table 2. Actual values of pressure sensor chip

      参 数设计数值实测数值
      压敏膜厚度1515.82
      压敏电阻长度120118.94
      电阻宽度1010.10
      电阻距敏感膜边缘间距108.62
    • Table 3. Actual values of parameters of pressure sensor

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      Table 3. Actual values of parameters of pressure sensor

      参 数测试值
      量程/kPa40
      灵敏度/(mV·kPa-10.444
      精度/%FS0.1
      非线性度/%FS0.073 6
      迟滞/%FS0.038
      零点漂移/mV1.43
      灵敏度温度系数/(%FS·℃-1-0.19
      电阻温度系数/(%FS·℃-10.1
      最大过载压力/kPa120
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    Shiqiu PENG, Saining ZHU. Optimization of sensitivity of MEMS micro-pressure sensor[J]. Optics and Precision Engineering, 2022, 30(13): 1582

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    Paper Information

    Category: Micro/Nano Technology and Fine Mechanics

    Received: Mar. 24, 2022

    Accepted: --

    Published Online: Jul. 27, 2022

    The Author Email: PENG Shiqiu (psq1020@163.com)

    DOI:10.37188/OPE.20223013.1582

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