A photoelectronic reversible logic gate applied to neuromorphic photonics and quantum computation was constructed with a hybrid nano-thin film lithium niobate and silicon nitride waveguide. The main structure of the photoelectronic reversible logic gate was composed of two cascaded Mach-Zehnder modulators. The total length of the gate was only 4.4mm, being only one hundredth of the length of a common proton exchange lithium niobate modulator. Operating at the wavelength of 1.55μm, the Mach-Zehnder modulator achieved a complete power exchange with only 4.9V voltage that was well compatible with CMOS process. The device characteristics show that the photoelectronic reversible logic gate can realize reversible logic operation. Moreover, in the wavelength range of 1.4μm to 1.6μm, the mean insertion loss of the device is 0.6dB, the minimum cross-talk of the output port is -47dB, and the maximum extinction ratio is 41dB. In the voltage range of 4V to 6V, the mean insertion loss is 0.63dB, the minimum cross-talk of the output port is -26dB, and the maximum extinction ratio is 22dB. Those performances guarantee the effectiveness of the photoelectronic reversible logic gate.