Researching | Electropolymerized dopamine-based memristors using threshold switching behaviors for artificial current-activated spiking neurons

Journal of Semiconductors, Volume. 46, Issue 2, 022402(2025)

Electropolymerized dopamine-based memristors using threshold switching behaviors for artificial current-activated spiking neurons

Bowen Zhong^1,2, Xiaokun Qin^1,2, Zhexin Li^1,2, Yiqiang Zheng^1,2, Lingchen Liu^1,2, Zheng Lou^1,2, and Lili Wang^1,2、*

Author Affiliations

¹State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Bowen Zhong, Xiaokun Qin, Zhexin Li, Yiqiang Zheng, Lingchen Liu, Zheng Lou, Lili Wang. Electropolymerized dopamine-based memristors using threshold switching behaviors for artificial current-activated spiking neurons[J]. Journal of Semiconductors, 2025, 46(2): 022402

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Paper Information

Category: Research Articles

Received: Jul. 10, 2024

Accepted: --

Published Online: Mar. 28, 2025

The Author Email: Wang Lili (LLWang)

DOI:10.1088/1674-4926/24070007

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology