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Infrared and Laser Engineering, Volume. 47, Issue 9, 920006(2018)

Effects of time-dependent dielectric breakdown reliability of 130 nm partially depleted SOI MOS devices exposed to γ-ray

Ma Teng1...2,3, Su Dandan1,2,3, Zhou Hang1,2,3, Zheng Qiwen1,2, Cui Jiangwei1,2, Wei Ying1,2, Yu Xuefeng1,2, and Guo Qi12 |Show fewer author(s)
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    Ma Teng, Su Dandan, Zhou Hang, Zheng Qiwen, Cui Jiangwei, Wei Ying, Yu Xuefeng, Guo Qi. Effects of time-dependent dielectric breakdown reliability of 130 nm partially depleted SOI MOS devices exposed to γ-ray[J]. Infrared and Laser Engineering, 2018, 47(9): 920006

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    Paper Information

    Category: 光电器件及应用

    Received: Apr. 5, 2018

    Accepted: May. 3, 2018

    Published Online: Oct. 6, 2018

    The Author Email:

    DOI:10.3788/irla201847.0920006

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology