Researching | Bidirectional rectifier with gate voltage control based on Bi2O2Se/WSe2 heterojunction

Journal of Semiconductors, Volume. 45, Issue 1, 012701(2024)

Bidirectional rectifier with gate voltage control based on Bi₂O₂Se/WSe₂ heterojunction

Ruonan Li¹, Fangchao Lu¹, Jiajun Deng¹, Xingqiu Fu¹, Wenjie Wang^1、*, and He Tian^2、**

Author Affiliations

¹North China Electric Power University and Hebei Key Laboratory of Physics and Energy Technology, Beijing 102206, China

²School of Integrated Circuits & Beijing National Research on Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

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Ruonan Li, Fangchao Lu, Jiajun Deng, Xingqiu Fu, Wenjie Wang, He Tian. Bidirectional rectifier with gate voltage control based on Bi₂O₂Se/WSe₂ heterojunction[J]. Journal of Semiconductors, 2024, 45(1): 012701

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Paper Information

Category: Articles

Received: Nov. 14, 2023

Accepted: --

Published Online: Mar. 13, 2024

The Author Email: Wang Wenjie (WJWang), Tian He (HTian)

DOI:10.1088/1674-4926/45/1/012701

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