Preface to Special Issue on Towards High Performance Ga<sub>2</sub>O<sub>3</sub> Electronics: Epitaxial Growth and Power Devices (Ⅰ)

Genquan Han; Shibing Long; Yuhao Zhang; Yibo Wang; Zhongming Wei

doi:10.1088/1674-4926/44/6/060101

Journal of Semiconductors, Volume. 44, Issue 6, 060101(2023)

Preface to Special Issue on Towards High Performance Ga₂O₃ Electronics: Epitaxial Growth and Power Devices (Ⅰ)

Genquan Han^1、*, Shibing Long^2、**, Yuhao Zhang^3、***, Yibo Wang^4、****, and Zhongming Wei^5、*****

Author Affiliations

¹School of Microelectronics, Xidian University, Xi’an 710071, China

²School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

³Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA 24060, USA

⁴Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China

⁵Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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Genquan Han, Shibing Long, Yuhao Zhang, Yibo Wang, Zhongming Wei. Preface to Special Issue on Towards High Performance Ga₂O₃ Electronics: Epitaxial Growth and Power Devices (Ⅰ)[J]. Journal of Semiconductors, 2023, 44(6): 060101

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Paper Information

Category: Articles

Received: May. 19, 2023

Accepted: --

Published Online: Jul. 6, 2023

The Author Email: Han Genquan (gqhan@xidian.edu.cn), Long Shibing (shibinglong@ustc.edu.cn), Zhang Yuhao (yhzhang@vt.edu), Wang Yibo (ybwang2022@sinano.ac.cn), Wei Zhongming (zmwei@semi.ac.cn)

DOI:10.1088/1674-4926/44/6/060101

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