[1] [1] ZHANG X C, HU B B, DARROW J T, et al.. Generation of femtosecond electromagnetic pulses from semiconductor surfaces ［J］. Appl. Phys. Lett., 1990,56:1011-1013.

[2] [2] DAVIES A G, LINFIELD E H,JOHNSTON M B. The development of terahertz sources and their applications ［J］. Phys. Med. Biol., 2002,47:3679-3689.

[3] [3] KLAPPENBERGER F, RENK K F. Transient-pulse nonlinear spectroscopy with the radiation of a multimode THz gas laser ［J］. Int. J. of Infrar. and Millim. Waves, 2003,24:1405-1414.

[4] [4] CARR G L, MICHAEL C M, WAYNE R M, et al.. High-power terahertz radiation from relativistic electrons ［J］. Nature,2002, 420:153-156.

[5] [5] KOEHLER R,TREDICUCCI A, BELTRAM F, et al..Terahertz semiconductor-heterostructure laser ［J］. Nature, 2002, 417:156-159.

[6] [6] DMITRIEV V G, GURZADYAN G G, NIKOGOSYAN D N. Handbook for Nonlinear Crystals ［M］. Berlin:Springer,1997:166-182.

[7] [7] FERNELIUS N C. Properties of gallium selenide single crystal ［J］. Prog. Cryst. Growth and Charact., 1994, 28:275-353.

[8] [8] SHI W, DING Y J. A monochromatic and high-power terahertz source tunable in the ranges of 2.7-38.4 and 58.2-3540 μm for variety of potential applications ［J］. Appl. Phys. Lett., 2004,84:1635-1637.

[9] [9] HSU Y K,CHANG C S, HSIEH W F. Photoluminescence study of GaSe doped with Er ［J］. Jpn. J. Appl. Phys., 2003, 42:4222-4225.

[10] [10] DAS S, GHOSH C, VOEVODINA O G, et al.. Modified GaSe crystal as a parametric frequency converter ［J］. Appl. Phys. B, 2005,82:43-46.

[11] [11] SUHRE D R, SINGH N B, BALAKRISHNA V, et al.. Hopkins improved crystal quality and harmonic generation in GaSe doped with indium ［J］. Opt. Lett., 1997,22:775-777.

[12] [12] TIKHOMIROV A A, ANDREEV Y M, LANSKII G V, et al.. Doped GaSe nonlinear crystal ［J］. SPIE, 2006, 6258:625809-1-625809-9.

[13] [13] HSU Y K, CHEN C W,HUANG J Y, et al.. Erbium doped GaSe crystal for mid-IR applications ［J］. Opt. Express, 2006,14:5484-5491.

[14] [14] ZHANG H Z, KANG Z H, JIANG Y, et al.. SHG phase matching in GaSe and mixed GaSe1-xSx, x≤0.412, crystals at room temperature ［J］. Opt. Express, 2008,16:9951-9957.

[15] [15] ANDREEV Y M, ATUCHIN V V, LANSKII G V, et al.. Growth, real structure and applications of GaSe1-xSx crystals ［J］. Mater. Sci. and Eng.B, 2006, 128:205-210.

[16] [16] WU Q, ZHANG X C. Free-space electro-optic sampling of terahertz beams ［J］. Appl. Phys. Lett., 1995, 67:3523-3525.

[17] [17] YU B L,ZENG Z,XING Q,et al.. Probing dielectric relaxation properties of liquid CS2 with terahertz time-domain spectroscopy ［J］. Appl. Phys. Lett., 2003, 82:4633-4635.

[18] [18] HO C H,WU C C, CHENG Z H. Crystal structure and electronic structure of GaSe1-xSx series layered crystal ［J］. J. Cryst. Growth, 2005, 279:321-328.

[19] [19] HO C H, HUANG K W. Visible luminescence and structural property of GaSe1-xSx(0≤x≤1) series layered crystals ［J］. Solid State Comm., 2005,136:591-594.

[20] [20] MANFREDOTTI C, MANCINI A M, RIZZO A, et al.. Electrical properties of GaSxSe1-x solid solutions ［J］. Phys. Stat. Sol. A,1978,48:293-296.

[21] [21] YOSHIDA H, NAKASHIMA S,MITSUISHI A. Phonon Raman spectra of layer compound GaSe ［J］. Phys. Stat. Sol. B,1973,59:655-666.

[22] [22] CHEN C W, TANG T T, LIN S L, et al.. Optical properties and potential applications of ε-GaSe at terahertz frequencies ［J］. J. Opt. Soc. Am.B,2009,26:58-65.