INFRARED, Volume. 41, Issue 5, 13(2020)

Study on Low Resistance Ohmic Contact Technology of GaAs/AlGaAs Quantum Well Infrared Detectors

Zhen TAN... Chun-ling LI, Hai-yan SUN, Min ZHANG and Cheng-gang WANG |Show fewer author(s)
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    References(4)

    [1] [1] Karbownik P. Low Resistance Ohmic Contact to n+ GaAs for Application in GaAs/AlGaAs Quantum Cascade Lasers[J]. Optica Applicata, 2009, 39(4): 655661.

    [2] [2] Abhilash T S, Kumar C R, Rajaram G. Influence of Nickel Layer Thickness on the Magnetic Prope- rties and Contact Resistance of AuGe/Ni/Au Ohmic Contacts to GaAs/AlGaAs Heterostructures[J]. Physics D: Applied Physics, 2009, 42(12): 125104.

    [3] [3] Miah M I. Low-temperature Annealed Ohmic Contacts to Si-doped GaAs and Contact Formation Mechanisms[J]. Materials Chemistry and Physics, 2009, 113(2): 967970.

    [4] [4] Erofeev E, Kagadei V. Formation of Ge/Cu Ohmic Contacts to n-GaAs with Atomic Hydrogen Pre-annealing Step[C]. SPIE, 2010, 7521: 75210K.

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    TAN Zhen, LI Chun-ling, SUN Hai-yan, ZHANG Min, WANG Cheng-gang. Study on Low Resistance Ohmic Contact Technology of GaAs/AlGaAs Quantum Well Infrared Detectors[J]. INFRARED, 2020, 41(5): 13

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    Paper Information

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    Received: Mar. 10, 2020

    Accepted: --

    Published Online: Nov. 11, 2020

    The Author Email:

    DOI:10.3969/j.issn.1672-8785.2020.05.002

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