Chinese Journal of Quantum Electronics, Volume. 36, Issue 3, 366(2019)

Properties of weak couplingpolaron in monolayer graphene

JIACaihong 1、*, Zhaohua DING1, and Rui WANG2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(12)

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    [6] [6] Britnell L, Gorbachev R V, Jahi R, et al. Field-effect tunneling transistor based on vertical graphene heterostructures [J]. Science, 2012, 335(6071): 947-950.

    [7] [7] Min S C, Lee G H, Yu Y Y, et al. Controlled chargetrapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices [J]. Nature Communications, 2013, 4(3): 1624-1629.

    [8] [8] Ding Zhaohua, Zhao Ying, Xiao Jinglin. The magnetic effect of polaron in monolayer graphene [J]. Journal of Low Temperature Physics, 2016, 182(5): 162-169.

    [9] [9] Ding Zhaohua, Zhao Ying, Xiao Jinglin. The properties of strong couple bound polaron in monolayer graphene [J]. Superlattices and Microstructures, 2016, 97: 298-302.

    [10] [10] Ding Zhaohua, Zhao Ying, Xiao Jinglin. The first excited state energy of strong couple bound polaron in monolayer graphene [J]. Superlattices and Microstructures, 2018, 113: 20-24.

    [12] [12] Xia Y, Li W P, Li Z Q, et al. Coulomb impurity effects on the zero-Landau level splitting of graphene on polar substrates [J]. Superlattices and Microstructures, 2017, 104: 178-185.

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    JIACaihong, DING Zhaohua, WANG Rui. Properties of weak couplingpolaron in monolayer graphene[J]. Chinese Journal of Quantum Electronics, 2019, 36(3): 366

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    Paper Information

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    Received: Jun. 5, 2018

    Accepted: --

    Published Online: Jun. 17, 2019

    The Author Email: JIACaihong (2677299740@qq.com)

    DOI:10.3969/j.issn.1007-5461.2019.03.018

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