Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum

Yuan Yuan; Jiyuan Zheng; Yaohua Tan; Min Ren; Yiwei Peng; Ann-Kathryn Rockwell; Seth R. Bank; Avik W. Ghosh; Joe C. Campbell

doi:10.1364/PRJ.7.000273

Photonics Research, Volume. 7, Issue 3, 273(2019)

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum

Yuan Yuan¹, Jiyuan Zheng¹, Yaohua Tan¹, Min Ren¹, Yiwei Peng¹, Ann-Kathryn Rockwell², Seth R. Bank², Avik W. Ghosh¹, and Joe C. Campbell^1、*

Author Affiliations

¹Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA

²Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA

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Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Min Ren, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum[J]. Photonics Research, 2019, 7(3): 273

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Paper Information

Category: Errata

Received: Dec. 13, 2018

Accepted: --

Published Online: Feb. 20, 2019

The Author Email: Joe C. Campbell (jccuva@virginia.edu)

DOI:10.1364/PRJ.7.000273

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology