Acta Optica Sinica, Volume. 24, Issue 8, 1057(2004)

Calculation of Laser Irradiation Effect and Analysis of Laser-Induced Damage Threshold in Semiconductor

[in Chinese]1、*, [in Chinese]1,2, and [in Chinese]1
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  • 2[in Chinese]
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    References(4)

    [2] [2] Amit Pratap Singh, Avinashi Kapoor, Tripathi K N et al.. Laser damage studies of silicon surfaces using ultra-short laser pulses. Opt. & Laser Technol., 2002, 34(1): 37~43

    [3] [3] Liu X, Du D, Mourou G. Laser ablation and micromachining with ultrashort laser pulses. IEEE J. Quant. Electron., 1997, 33(10): 1706~1716

    [6] [6] Prahl S A. Charts to rapidly estimate temperature following laser irradiation. Proc. SPIE, 1995, 2391: 499~511

    [12] [12] Kuanr A V, Bansal S K, Srivastava G P. Laser-induced damage in InSb at 1.06 μm wavelengtha comparative study with Ge, Si, and GaAs. Opt. & Laser Technol., 1996, 28(5): 345~353

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    [in Chinese], [in Chinese], [in Chinese]. Calculation of Laser Irradiation Effect and Analysis of Laser-Induced Damage Threshold in Semiconductor[J]. Acta Optica Sinica, 2004, 24(8): 1057

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Jun. 10, 2003

    Accepted: --

    Published Online: Jun. 12, 2006

    The Author Email: (duanxiaofeng@xinhuanet.com)

    DOI:

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