[1] [1] Herrmann K H, Hoerstel W, Mollmann K P et al.. Optical and photoelectrical properties of HgCdTe. Semiconductor Sci. Technol., 1992, 7(4):578～582

[2] [2] Herrmann K H, Mollmann K P, Tomm J W. Broading mechanisms near the E0 transition in narrow-gap Hg1-xCdxTe (0.2<x<0.6). J. Cryst. Growth, 1992, 117(3):758～762

[3] [3] Finkman E, Schacham S E. The exponential opitical absorption band tail of Hg1-xCdxTe. J. Appl. Phys., 1984, 56(10):2896～2900

[4] [4] Anderson W W. Use of cascated apertures to reduse for infraded diffraction. Infrared Phys., 1980, 20(6):363～368

[5] [5] Hansen G L, Schmit J L, Casselman T N. Energy gap versus alloy composition and temperature in Hg1-xCdxTe. Appl. Phys., 1982, 53(10):7099～7101

[6] [6] Tran T K, Parikh A, Pearson S D et al.. Magnetoluminescence properties of Hg1-xCdxTe epitxial layers and superlattic grown by metalorganic molecular beam epitaxy. J. Electron. Mater., 1996, 25(8):1203～1208

[7] [7] Han J W, Hwang S, Larper Y et al.. Modulation-doping HgCdTe. Vacuum Sci. Technol., 1989, A7(2):305～310

[8] [8] Tomm J W, Herrmann K H, Hoerstel W et al.. Infrared photoluminescence in the narrow-gap semiconductors. Phys. Stat. Sol (a)., 1990, 122(1):11～42