Acta Optica Sinica, Volume. 19, Issue 9, 1284(1999)
Photoluminescence Study of MBE Hg0.68Cd0.32Te Epilayers
By using photoluminescences (PL), the molecular beam epitaxy (MBE) grown Hg1-xCdxTe (x=0.32) epilayers are studied. The PL measurement shows a strong near band edge emission peak with an FWHM of 5 meV and a small broadening energy, E0(4.2 K)=1.3 meV, which indicates the high quanlity was obtained. Comparing the results of as-grow and annealing sample shows that annealing sample has a better crystal quality than the as-grow sample.
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Photoluminescence Study of MBE Hg0.68Cd0.32Te Epilayers[J]. Acta Optica Sinica, 1999, 19(9): 1284