Laser & Optoelectronics Progress, Volume. 47, Issue 10, 102301(2010)

Influence of Electron Beam Irradiation on GaN-Based Blue LED

Liang Liang*, Niu Pingjuan, and Yu Liyuan
Author Affiliations
  • [in Chinese]
  • show less
    References(12)

    [1] [1] Carmine J. Salvo. Solid state light valve[J]. IEEE Trans. Electron Devices, 1971, 18(9): 748~755

    [2] [2] Rahman F.. Solid state lighting-A bright future[J]. Electron. World, 2006, 113(1839): 30~34

    [3] [3] Xie Wanling. Effects of high-temperature electron irradiation in n-GaN schottky barrier diode[D]. Changdu: Sichuan University, 2006. 8~14

    [5] [5] Gelhausen O., Klein H. N., Phillips M. R. et al.. Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN[J]. Appl. Phys. Lett., 2002, 81(20): 3747~3749

    [6] [6] Cooper D., Twitchett-Harrison A. C., Midgley P. A. et al.. The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions[J]. Appl. Phys., 2007, 101(9): 094508

    [7] [7] Chernyak Leonid, Osinsky Andrei, Fuflyigin Vladimir et al.. Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices[J]. Appl. Phys. Lett., 2000, 77(6): 875~877

    [8] [8] Daisuke Morita, Masahiko Sano, Masashi Yamamoto et al.. Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structure[J]. Physical Status Solidi (A) Appl. Research, 2003, 200(1): 114~117

    [9] [9] Pavesi M., Rossi F., Zanoni E.. Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes[J]. Semicond. Sci. Technol., 2006, 21(2): 138~143

    [10] [10] Wang R. X., Xu S. J., Fung S. et al.. Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers[J]. Appl. Phys. Lett., 2005, 87(3): 1~3

    [11] [11] L. Polenta, Z. Q. Fang, D. C. Look. On the main irradlation-induced defect in GaN[J]. Appl. Phys. Lett, 2000, 76(15): 2086~2088

    [12] [12] Sharshar K. A. A., Rageh M. S. L., Ashry M.. Characterization of electron beam and gamma irradiation in light emitting diodes[C]. Proceedings of the 15th International Conference on Microelectronics, 2003. 395~398

    CLP Journals

    [1] Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Research on Efficiency Improvement of InGaN Light-Emitting Diodes with InGaN/GaN Superlattice Barrier[J]. Laser & Optoelectronics Progress, 2014, 51(3): 32301

    [2] Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Study on the Growth of InGaN/GaN Multiple Quantum Wells on GaN {11-22} Semipolar Plane[J]. Laser & Optoelectronics Progress, 2014, 51(2): 22302

    Tools

    Get Citation

    Copy Citation Text

    Liang Liang, Niu Pingjuan, Yu Liyuan. Influence of Electron Beam Irradiation on GaN-Based Blue LED[J]. Laser & Optoelectronics Progress, 2010, 47(10): 102301

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Optical Devices

    Received: Apr. 9, 2010

    Accepted: --

    Published Online: Sep. 21, 2010

    The Author Email: Liang Liang (liangliang19850921@163.com)

    DOI:10.3788/lop47.102301

    Topics