Laser & Optoelectronics Progress, Volume. 47, Issue 10, 102301(2010)

Influence of Electron Beam Irradiation on GaN-Based Blue LED

Liang Liang*, Niu Pingjuan, and Yu Liyuan
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    The influence of low energy electron beam irradiation (LEEBI) on GaN-based blue LED of high power has been studied. Making use of the electron beam from the lab to simulate the space electron irradiation, We take LEEBI on blue LED, and make contrast to unirradiated LED. The changes of electrical and optical properties are studied. It′s found that the higher lighting intensity but lower forward and breakdown voltage can be obtained on irradiated LED. The experimental result has been analyzed and discussed through the mechanism of electron beam irradiation.

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    Liang Liang, Niu Pingjuan, Yu Liyuan. Influence of Electron Beam Irradiation on GaN-Based Blue LED[J]. Laser & Optoelectronics Progress, 2010, 47(10): 102301

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    Paper Information

    Category: Optical Devices

    Received: Apr. 9, 2010

    Accepted: --

    Published Online: Sep. 21, 2010

    The Author Email: Liang Liang (liangliang19850921@163.com)

    DOI:10.3788/lop47.102301

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