Chinese Journal of Quantum Electronics, Volume. 32, Issue 1, 107(2015)

Thermal properties of Ga doped ZnO oxide

Shuozhang MA1,*... Feipeng ZHANG2,3, Hui FANG1, Xin ZHANG3, Qingmei LU3 and Jiuxing ZHANG3 |Show fewer author(s)
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    References(13)

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    [8] [8] Zhang F P, Lu Q M, Zhang X, et al. Electrical transport properties of CaMnO3 thermoelectric compound: A theoretical study [J]. J. Phys. Chem. Phys., 2013, 74: 1859.

    [9] [9] Zhang F P, Zhang X, Lu Q M, et al. Electronic structure and thermal properties of doped CaMnO3 system [J]. J. Alloys Compds, 2011, 509: 4171.

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    [13] [13] Zhang X, Lu Q M, Zhang F P, et al. Enhanced thermoelectric performance of Mg2Si0.4Sn0.6 solid solutions by in nanostructures and minute Bi-doping [J]. Appl. Phys. Lett., 2013, 103: 063901.

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    MA Shuozhang, ZHANG Feipeng, FANG Hui, ZHANG Xin, LU Qingmei, ZHANG Jiuxing. Thermal properties of Ga doped ZnO oxide[J]. Chinese Journal of Quantum Electronics, 2015, 32(1): 107

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    Paper Information

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    Received: Mar. 5, 2014

    Accepted: --

    Published Online: Jan. 27, 2015

    The Author Email: Shuozhang MA (365185860@qq.com)

    DOI:10.3969/j.issn.1007-5461. 2015.01.016

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