[1] [1] Oh S, Yang G, Kim J. Electrical characteristics of vertical Ni/βGa2O3 Schottky barrier diodes at high temperatures［J］. ECS Journal of Solid State Science and Technology, 2016, 6(2): Q3022Q3025.

[2] [2] Higashiwaki M, Sasaki K, Kuramata A, et al. Development of gallium oxide power devices［J］. Physica Status Solidi (A) Applications and Materials, 2014, 211(1): 2126.

[3] [3] He Q M, Mu W X, Fu B, et al. Schottky barrier rectifier based on (100) βGa2O3 and its DC and AC characteristics［J］. IEEE Electron Device Letters, 2018, 39(4): 556559.

[4] [4] He Q M, Mu W X, Dong H,et al. Schottky barrier diode based on βGa2O3 (100) single crystal substrate and its temperaturedependent electrical characteristics［J］.Applied Physics Letters, 2017, 110(9): 093503.

[5] [5] Buzio R, Gerbi A, He Q M, et al. Benchmarking βGa2O3 Schottky diodes by nanoscale ballistic electron emission microscopy［J］. Advanced Electronic Materials, 2020, 6(3): 1901151.

[6] [6] GuzmánNavarro G, HerreraZaldívar M, ValenzuelaBenavides J, et al. CL study of blue and UV emissions in βGa2O3 nanowires grown by thermal evaporation of GaN［J］. Journal of Applied Physics, 2011, 110(3): 034315.

[7] [7] Onuma T, Fujioka S, Yamaguchi T, et al. Polarized Raman spectra in βGa2O3 single crystals［J］. Journal of Crystal Growth, 2014, 401: 330333.

[8] [8] Sze S M. Physics of semiconductor devices［M］. 2nd ed. New York: Wiley,1981.

[9] [9] Cowley A M, Sze S M. Surface states and barrier height of metalsemiconductor systems［J］. Journal of Applied Physics, 1965, 36(10): 32123220

[10] [10] Cheung S K, Cheung N W. Extraction of Schottky diode parameters from forward currentvoltage characteristics［J］. Applied Physics Letters, 1986, 49(2): 8587

[11] [11] Sasaki K, Higashiwaki M, Kuramata A, et al. Ga2O3 Schottky barrier diodes fabricated by using singlecrystal Ga2O3 (010) substrates［J］. IEEE Electron Device Letters, 2013, 34(4): 493495

[12] [12] He H Y, Orlando R, Blanco M A, et al. Firstprinciples study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases［J］. Physical Review B, 2006, 74(19): 195123.

[13] [13] Perevalov T V, Shaposhnikov A V, Gritsenko V A, et al. Electronic structure of αAl2O3: ab initio simulations and comparison with experiment［J］. JETP Letters, 2007, 85(3): 165168.

[14] [14] Ma X Y, Sadagopan P, Sudarshan T S. Investigation on barrier inhomogeneities in 4HSiC Schottky rectifiers［J］. Physica Status Solidi A, 2006, 203(3): 643650.

[15] [15] Ewing D J, Porter L M, Wahab Q, et al. Inhomogeneities in Ni/4HSiC Schottky barriers: localized Fermilevel pinning by defect states［J］. Journal of Applied Physics, 2007, 101(11): 114514.