The high quality βGa2O3 single crystal doped with Si was grown by edgedefined filmfed grown (EFG) method with the doping concentration of 2×1018 cm-3. The crystal is light blue and the basic properties of the crystal were characterized by Laue diffraction, cathodoluminescence (CL) and Raman test. These characterisations show that the quality of the asgrown crystal is high. The bandgap is about 4.71 eV obtained by ultraviolet transmittance spectrum. In addition, vertical Schottky diode was fabricated on the crystal by electron beam evaporation, lithography and development techniques. The average breakdown field strength EAva of the Schottky diode is 2.1 MV/cm and the on resistance is 3 mΩ·cm2. Therefore, the simple βGa2O3 device shows excellent performance.