The traditional dual-directional SCR (DDSCR) have latch-up effect due to low holding voltage. In this study, a novel DDSCR with a high holding voltage was proposed. The floating and highly doped N+ and P+ active regions were added between the anode and cathode of the traditional device. The well in the P+ active region was recombined with electrons in the well and the N+ active region forced the current to bleed through the SCR path of lower resistance deep in the device, then the problem of low holding voltage of the traditional device was solved. Simulation based on TCAD results show that compared with the traditional DDSCR, the holding voltage of the novel device is increased from 2.9 V to 10.5 V. By extending the critical dimension D7, the holding voltage of the device can be further increased to 13.7 V. This device is suitable for chip protection with positive and negative voltages on I/O ports.