[1] [1] IGA K, KOYAMA F, KINOSHITA S. Surface-emitting semiconductor lasers［J］. IEEE Journal of Quantum Electronics, 1988, 24(9): 1845-1855.

[2] [2] LI Te, NING Yong-qiang, SUN Yan-fang, et al. Beam quality of 980nm high power vertical cavity surface emitting laser［J］. Chinese Journal of Lasers, 2007, 34(5): 641-643.

[3] [3] LI Xiao-feng, PAN Wei, LUO Bin, et al. Theoretical study on nonlinear dynamics of vertical-cavity surface-emitting laser with multiple external optical feedbacks［J］. Chinese Journal of Lasers, 2004, 31(12): 1450-1452.

[4] [4] LI Te, NING Yong-qiang, SUN Yan-fang, et al. Temperature dependent characteristics of 980 nm two-dimensional bottom emitting VCSEL arrays［J］. Chinese Optics Letters, 2007, 5(Sup1):156-158.

[5] [5] RIBEIRO C T M, ZANATTA A R, ALVAREZ F. X-ray photoelectron spectroscopy of amorphous AlN alloys prepared by reactive rf sputtering［J］. Journal of Non-Crystalline Solids, 2002, 299-302(1): 324-326.

[6] [6] CUI Jin-jiang, NING Yong-qiang, SUN Yan-fang, et al. Vertical cavity surface emitting lasers fabricated with pulsed anodic oxidation［J］. Chinese Optics Letters, 2007, 5(Sup1): 145-147.

[7] [7] PU R, WILMSEN C W, GEIB K M, et al. Thermal resistance of VCSEL′s bonded to integrated circuits［J］. IEEE Photonics Technology Letters, 1999, 11(12): 1554-1556.

[8] [8] PARK J, LEE C C. An electrical model with junction temperature for light-emitting diodes and the impact on conversion efficiency［J］. IEEE Electron Device Letters, 2005, 26(5): 308-310.

[9] [9] HOU Li-feng, ZHONG Gang, ZHAO Ying-jie, et al. High-power VCSEL with radial brigde electrodes［J］. Acta Photonica Sinica, 2010, 39(1): 3-4.

[10] [10] SAFAISINI R, JOSEPH J R, LOUDERBACK D, et al. Temperature dependence of 980-nm oxide-confined VCSEL dynamics［J］. IEEE Photonics Technology Letters, 2008, 20(14): 1274-1275.