Chinese Optics Letters, Volume. 9, Issue 5, 053102(2011)
Spectroscopic ellipsometric properties and resistance switching behavior in Six(ZrO2)100x films
We prepare Six(ZrO2)100?x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter analyzer, respectively. With the proper Si-doped Six(ZrO2)100?x interlayer, the Al/ Six(ZrO2)100?x/Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.
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Xiaodong Wang, Liang Feng, Shenjin Wei, Huanfeng Zhu, Kun Chen, Da Xu, Ying Zhang, Jing Li. Spectroscopic ellipsometric properties and resistance switching behavior in Six(ZrO2)100x films[J]. Chinese Optics Letters, 2011, 9(5): 053102
Category: Thin films
Received: Nov. 17, 2010
Accepted: Dec. 17, 2010
Published Online: Apr. 22, 2011
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