Fig. 1. Schematic of ion sputtering where S₁，S₂ correspond to areas of redeposition region A₁，A₂， respectively

Fig. 2. Effect of dose of ions on sidewall tilt

Fig. 3. Effect of dwell time on redeposition distribution

Fig. 4. Schematic of traditional sputtering and SLAS path

Fig. 5. Principle schematic of SLAS

Fig. 6. Evolution of redeposition process

Fig. 7. Evolution of trench section in simulation of SLAS

Fig. 8. Schematic of sidewall sections before and after SLAS correction

Fig. 9. Evolution of trenches upon gradual approaching of single-pixel lines to central area

Fig. 10. Fresnel zone plate fabricated by SLAS-mediated FIB