For the special requirements of the exciting source of a 87Rb based atomic clock for the miniaturization and high temperature conditions, a 795 nm Vertical Cavity Surface Emitting Laser(VCSEL)corresponding to the Rb atom energy level transition was designed and fabricated. Firstly, the energy levels and material gains of the InAlGaAs/AlGaAs Multiple Quantum Wells (MQWs) were calculated by the k·p method to optimize the compositions and thicknesses of the quantum wells. Then, a Distributed Bragg Reflectors(DBRs) at 795 nm were designed and their reflection characteristics, longitudinal optical fields and averaged doping profiles were calculated and optimized using a one-dimensional transfer matrix method. Finally, the epitaxial structure of the 795 nm VCSEL with optimized MQWs and DBRs were grown on a GaAs substrate by Metal Organic Vapor Phase Epitaxy (MOVPE) and the oxide-confined 795 nm top-emitting VCSELs with unclosed-mesa structures were fabricated and characterized. Experimental results indicate that the packaged VCSELs can keep lasing under a cw current from 25 ℃ to 85 ℃ with power decreasing from 17 mW to 1.8 mW, the far field profiles are circular with a divergence angle of 15° and the temperature-shift of the lasing wavelength is 0.064 nm/℃. Moreover, the lasing wavelength moves to the wavelength required by 87Rb atoms at an ambient temperature of 52 ℃ and a current of 100 mA. The 795 nm VCSELs satisfy the basic requirements of 87Rb based miniaturized atom clocks for stable operation in a special wavelength and high-temperatures.