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Journal of Semiconductors, Volume. 44, Issue 10, 102801(2023)

High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric

Hao Jin1,2, Sen Huang1,2、*, Qimeng Jiang1、**, Yingjie Wang1,2, Jie Fan1, Haibo Yin1,2, Xinhua Wang1,2, Ke Wei1,2, Jianxun Liu3, Yaozong Zhong3, Qian Sun3, and Xinyu Liu1,2
Author Affiliations
  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    [26] S Huang, X Y Liu, K Wei et al. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors. Appl Phys Lett, 106, 033507(2015).

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    Hao Jin, Sen Huang, Qimeng Jiang, Yingjie Wang, Jie Fan, Haibo Yin, Xinhua Wang, Ke Wei, Jianxun Liu, Yaozong Zhong, Qian Sun, Xinyu Liu. High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric[J]. Journal of Semiconductors, 2023, 44(10): 102801

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    Paper Information

    Category: Articles

    Received: Feb. 10, 2023

    Accepted: --

    Published Online: Dec. 26, 2023

    The Author Email:

    DOI:10.1088/1674-4926/44/10/102801

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    Lasers and Laser Optics
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    Instrumentation, Measurement and Metrology