Journal of Semiconductors, Volume. 45, Issue 2, 021501(2024)

Progress in efficient doping of Al-rich AlGaN

Jiaming Wang1, Fujun Xu1、*, Lisheng Zhang1,2, Jing Lang1, Xuzhou Fang1, Ziyao Zhang1, Xueqi Guo1, Chen Ji1, Chengzhi Ji1, Fuyun Tan1, Xuelin Yang1, Xiangning Kang1, Zhixin Qin1,2, Ning Tang1,3,4, Xinqiang Wang1,3,4, Weikun Ge1, and Bo Shen1,3,4、**
Author Affiliations
  • 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 2Beijing SinoGaN Semiconductor Technology Co., Ltd., Beijing 101399, China
  • 3Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
  • 4Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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    Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Chengzhi Ji, Fuyun Tan, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen. Progress in efficient doping of Al-rich AlGaN[J]. Journal of Semiconductors, 2024, 45(2): 021501

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    Paper Information

    Category: Articles

    Received: Aug. 22, 2023

    Accepted: --

    Published Online: Apr. 24, 2024

    The Author Email: Xu Fujun (FJXu), Shen Bo (BShen)

    DOI:10.1088/1674-4926/45/2/021501

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