Examination and Confirmation of the Carrier Concentration in ZnSe:Cl

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Quantum Electronics, Volume. 17, Issue 1, 85(2000)

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

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References(2)

[5] [5] Dahmani R, Salamanca-Riba L, Nguyen N V et al. Determination of the optical constants of ZnSe films by spectroscopic ellisometry. J. Appl. Phys., 1994, 76(1): 514～517

[6] [6] Hougen C A. Model for infrared absorption and transmission of liquid-phase epitaxy HgCdTe. J. Appl. Phys., 1989, 66(8): 3763～3766

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Examination and Confirmation of the Carrier Concentration in ZnSe:Cl[J]. Chinese Journal of Quantum Electronics, 2000, 17(1): 85

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Paper Information

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Received: Nov. 26, 1998

Accepted: --

Published Online: May. 15, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology