Journal of Synthetic Crystals, Volume. 49, Issue 1, 152(2020)

Study on the Defects of ZnSe Polycrystalline Materials Prepared by Chemical Vapor Deposition Method

WEI Naiguang... JIANG Lipeng*, LI Dongxu, YANG Hai, YUAN Qin, GUO Li, TIAN Zhirui, SONG Zilin, LIU Xiaohua, LI Jianming and ZHANG Pengfei |Show fewer author(s)
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    References(9)

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    [5] [5] Sitnikova V E, Dunaev A A, Mamalimov R I, et al. Manifestation of crystal lattice distortions in the Ir reflection spectra of abrasion-treated ZnSe ceramics[J]. Journal of Applied Spectroscopy, 2017, 84(3):501-504.

    [7] [7] Lewis K L, Arthur G S. Surface and free carrier absorption processes in CVD zinc selenide[J]. Nat.Bur. Stand. Bull,1984,669: 86-101.

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    [10] [10] Gavrishchuk E M, Ikonnikov V B, Savin D V. Recrystallization behavior of zinc chalcogenides during hot isostatic pressing[J]. Inorganic Materials, 2014, 50(3):222-227.

    [11] [11] Biswas P, Senthil Kumar R, Ramavath P, et al. Effect of post-CVD thermal treatments on crystallographic orientation, microstructure, mechanical and optical properties of ZnS ceramics[J]. Journal of Alloys and Compounds, 2010,496:273-277.

    [13] [13] Steele S R, Pappis J. Chemical vapor deposition of IR materials[J]. F33615-70-C-1577 (1971).

    [14] [14] Gavrishchuk E M, Yashina E V. Zinc sulfide and zinc selenide optical elements for IR engineering[J]. J. Opt. Technol., 2004,71(12):822-827.

    [15] [15] Drezner, Berger Y S, Hefetz M. A correlation between microstructure, composition and optical transparency of CVD-ZnS[J]. Mater. Sci. and Eng. B., 2001, 87: 59-65.

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    WEI Naiguang, JIANG Lipeng, LI Dongxu, YANG Hai, YUAN Qin, GUO Li, TIAN Zhirui, SONG Zilin, LIU Xiaohua, LI Jianming, ZHANG Pengfei. Study on the Defects of ZnSe Polycrystalline Materials Prepared by Chemical Vapor Deposition Method[J]. Journal of Synthetic Crystals, 2020, 49(1): 152

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    Paper Information

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    Received: --

    Accepted: --

    Published Online: Jun. 15, 2020

    The Author Email: Lipeng JIANG (jianglipeng@guojing-tech.com)

    DOI:

    CSTR:32186.14.

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