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Optoelectronics Letters, Volume. 10, Issue 3, 213(2014)

Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

Li-qun CHEN1,*... Yang-hua CHEN2 and Cheng LI2 |Show fewer author(s)
Author Affiliations
  • 1Chengyi College, Jimei University, Xiamen 361021, China
  • 2Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
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    CHEN Li-qun, CHEN Yang-hua, LI Cheng. Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate[J]. Optoelectronics Letters, 2014, 10(3): 213

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    Paper Information

    Received: Feb. 16, 2014

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Li-qun CHEN (clq2113@163.com)

    DOI:10.1007/s11801-014-4021-y

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology