Infrared and Laser Engineering, Volume. 53, Issue 7, 20240153(2024)
Optical performance of Zn, Si doped GaAs nanowires
Fig. 1. SEM images of three NWs samples. (a) Undoped nanowires; (b) Si-doped nanowires; (c) Zn-doped nanowires
Fig. 2. 20 K low-temperature PL spectrum of three nanowires samples
Fig. 3. 20 K low-temperature variable power density PL spectra of three nanowires samples along with their fitting lines. (a) Variable power density PL spectra of Zn-doped nanowires and the relationship between integrated intensity and power density; (b) Relationship between peak position and
Fig. 4. Variable temperature PL spectrum of undoped, Si-doped nanowires along with their fitting lines. (a) Variable temperature PL spectra of undoped nanowires and relationship between peak position and temperature along with fitting line; (b) Variable temperature PL spectra of Si-doped nanowires and relationship between peak position and temperature along with fitting line
Fig. 5. TEM images and SEAD patterns of Zn-doped nanowire samples. (a) TEM image of Zn-doped nanowires; (b) HRTEM image of Zn-doped nanowires; (c) SEAD image of Zn-doped nanowires
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Tianyu LANG, Haizhu WANG, Haixin YU, Dengkui WANG, Xiaohui MA. Optical performance of Zn, Si doped GaAs nanowires[J]. Infrared and Laser Engineering, 2024, 53(7): 20240153
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Received: Apr. 3, 2024
Accepted: --
Published Online: Aug. 9, 2024
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