Acta Optica Sinica, Volume. 43, Issue 20, 2004002(2023)
Silicon-Based High-Sensitivity Near-Infrared Single-Photon dTOF Detector
Fig. 1. Cross-section diagram of the SPAD
Fig. 2. TCAD simulation results. (a) I-V characteristic curves; (b) 2D electric field profile
Fig. 3. Block diagram of single photon dTOF detector
Fig. 4. TDC readout circuit structure
Fig. 5. Measurement principle of the TDC
Fig. 6. Chip and test setup. (a) Micrograph of the chip ; (b) test platform
Fig. 7. I-V DC characteristic curves
Fig. 8. Test results of DCR and afterpulsing probability. (a) DCR versus excess voltage at different temperatures; (b) afterpulsing probability versus excess voltage at room temperature
Fig. 9. PDP as a function of photon wavelength
Fig. 10. Comparison of PDP and DCR properties for different SPADs at 905 nm
Fig. 11. Transfer curve of the TDC
Fig. 12. Nonlinear errors of the TDC. (a) DNL curve; (b) INL curve
Fig. 13. Dynamic characteristics test. (a) Transient output waveform; (b) sing-shot precision
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Shuaikang Wang, Danlu Liu, Qianyu Chen, Dong Han, Jiayuan Wang, Yue Xu, Ping Cao. Silicon-Based High-Sensitivity Near-Infrared Single-Photon dTOF Detector[J]. Acta Optica Sinica, 2023, 43(20): 2004002
Category: Detectors
Received: May. 6, 2023
Accepted: May. 31, 2023
Published Online: Oct. 23, 2023
The Author Email: Xu Yue (yuex@njupt.edu.cn)