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Laser & Optoelectronics Progress, Volume. 52, Issue 2, 21602(2015)

Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation

Lin Tao1、*, Zhang Haoqing1, Sun Hang1, Wang Yonggang2, Lin Nan3, and Ma Xiaoyu3
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  • 1[in Chinese]
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    Lin Tao, Zhang Haoqing, Sun Hang, Wang Yonggang, Lin Nan, Ma Xiaoyu. Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation[J]. Laser & Optoelectronics Progress, 2015, 52(2): 21602

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    Paper Information

    Category: Materials

    Received: Oct. 21, 2014

    Accepted: --

    Published Online: Jan. 21, 2015

    The Author Email: Tao Lin (llttlintao@163.com)

    DOI:103788/lop52.021602

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology