Laser & Optoelectronics Progress, Volume. 52, Issue 2, 21602(2015)
Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation
Impurity-free vacancy diffusion (IFVD) induced quantum well intermixing (QWI) of red light diode laser wafer using silicon dioxide (SiO2) encapsulation is explored. The wafer has an active region of two 5 nm-thick GaInP quantum wells and three 8 nm-thick AlGaInP barriers. The 250 nm SiO2 dielectric layer is prepared through electron beam evaporation method. The QWI is induced by rapid thermal annealing for 60 s at different temperatures. Blue shifts and full width at half maximum (FWHM) are obtained through photoluminescence tests. A maximum blue shift of 29.5 nm is obtained at 900 °C annealing temperature and an optimal FWHM of 43 nm by the IFVD-induced QWI is noted at 750 ℃.
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Lin Tao, Zhang Haoqing, Sun Hang, Wang Yonggang, Lin Nan, Ma Xiaoyu. Impurity-Free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using SiO2 Encapsulation[J]. Laser & Optoelectronics Progress, 2015, 52(2): 21602
Category: Materials
Received: Oct. 21, 2014
Accepted: --
Published Online: Jan. 21, 2015
The Author Email: Tao Lin (llttlintao@163.com)