Opto-Electronic Engineering, Volume. 33, Issue 4, 50(2006)

Simulation of resist development profile using thick resist exposure model

[in Chinese]1... [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, [in Chinese]1 and [in Chinese]1 |Show fewer author(s)
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    References(5)

    [1] [1] DILL F H,HORNBERGER W P,HAUGE P S,et al.Characterization of positive photoresist[J].IEEE Transactions on Electron Devices,1975,ED-22(7):445-452.

    [2] [2] HENDERSON C L,PANCHOLI S N,CHOWDHURY S A,et al.Photoresist characterization for lithography simulation.2.Exposure Parameter Measurements[J].SPIE,1997,3049:816-828.

    [3] [3] LIU Shi-jie,DU Jing-lei,DUAN Xi,et al.Enhanced dill exposure model for photoresist lithography[J].Microelectrionic Engineering,2005,78-79(1-4):490-495.

    [4] [4] MACK C A.Development of positive photoresists[J].Journal of the Electrochemical Society,1987,134(1):148-152.

    [5] [5] MACK C A.Prolith:a comprehensive optical lithography model[J].SPIE,1985,538:207-220.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Simulation of resist development profile using thick resist exposure model[J]. Opto-Electronic Engineering, 2006, 33(4): 50

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    Paper Information

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    Received: Mar. 20, 2005

    Accepted: --

    Published Online: Nov. 14, 2007

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