Acta Physica Sinica, Volume. 68, Issue 9, 098501-1(2019)
Fig. 1. (a) Device structures of the Cu/MXene/SiO2/W memristor; (b) SEM images of the MXene; (c)
Fig. 2. (a) Analog
Fig. 3. Variation trend of conductance of the device with the continuous positive and negative voltage spike.在连续正向和负向三角尖峰脉冲下, 器件电导的变化趋势
Fig. 4. (a) PPF characteristic curve under two continuous pulse stimuli; (b) relationship between the PPF index and pulse interval.(a) 两个连续脉冲刺激作用下的PPF特性曲线; (b) PPF 指数与脉冲时间间隔的关系
Fig. 5. Synapse-like mechanism of Cu/MXene/SiO2/W memristor: (a) Diffusion and migration of Cu2+ under positive voltage; (b) diffusion and migration of Cu2+ under negative voltage; (c) spontaneous rupture of conductive filament when the voltage is removed; (d) residual conductive filaments and newly formed conductive filaments. Cu/MXene/SiO2/W忆阻器生物响应机理 (a)正偏压下Cu2+的扩散与迁移运动; (b)负偏压下Cu2+的扩散与迁移运动; (c)撤去偏压, 电导丝的自主破灭; (d)残余电导丝与新形成的电导丝
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Yi-Hao Chen, Wei Xu, Yu-Qi Wang, Xiang Wan, Yue-Feng Li, Ding-Kang Liang, Li-Qun Lu, Xin-Wei Liu, Xiao-Juan Lian, Er-Tao Hu, Yu-Feng Guo, Jian-Guang Xu, Yi Tong, Jian Xiao.
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Received: Dec. 29, 2018
Accepted: --
Published Online: Oct. 29, 2019
The Author Email: Xiao Jian (xiaoj@njupt.edu.cn)