Chinese Journal of Quantum Electronics, Volume. 24, Issue 2, 221(2007)

Effect of the reflowing process on the I-V characteristics of LWIR HgCdTe photovoltaic detector

Bai-wei SUN* and Xiao-ping HU
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    References(4)

    [3] [3] Gopal Vishnu,Gupta Sudha,Bhan R K,et al. Modeling of dark characteristics of mercury cadmium telluride n+-p junctions [J].Infrared Physics & Technology,2003,(44): 143.

    [4] [4] Rais M H,et al. Characterisation of dark current in novel Hg1-xCdx Te mid-wavelength infrared photovoltaic detectors based on n-on-p junction formed by plasma-induced type conversion [J].Crystal Growth,2000,214(15):1106.

    [5] [5] Nemirovsky Y,et al. Tunneling and 1/f noise in HgCdTe photodiodes [J].Vac. Sci. Technol. B,1992,10(40):1602.

    [6] [6] Mestechkin A,Lee D L,et al. Bake stability of long-wavelength infrared HgCdTe photodiodes [J].Journal of Electronic Materials,1995,24(9): 1183.

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    SUN Bai-wei, HU Xiao-ping. Effect of the reflowing process on the I-V characteristics of LWIR HgCdTe photovoltaic detector[J]. Chinese Journal of Quantum Electronics, 2007, 24(2): 221

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    Paper Information

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    Received: Mar. 10, 2006

    Accepted: --

    Published Online: Jun. 7, 2010

    The Author Email: Bai-wei SUN (joshua.sun@gmail.com)

    DOI:

    CSTR:32186.14.

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