[1] [1] Chicot G, Eon D, Rouger N. Optimal drift region for diamond power devices[J].Diamond & Related Materials,2016,69:68-73.

          Chicot G, Eon D, Rouger N. Optimal drift region for diamond power devices[J].Diamond & Related Materials,2016,69:68-73.

[2] [2] Ueda K, Kasu M. High-pressure and high-temperature annealing effects of boron-implanted diamond[J].Diamond & Related Materials,2008,17:502-505.

          Ueda K, Kasu M. High-pressure and high-temperature annealing effects of boron-implanted diamond[J].Diamond & Related Materials,2008,17:502-505.

[3] [3] Bergman A A, Zaitsev A M, Huang M, et al. Photoluminescence and Raman studies of Xe ion-implanted diamonds: Dependence on implantation dose[J].Journal of Luminescence,2009,129:1524-1526.

          Bergman A A, Zaitsev A M, Huang M, et al. Photoluminescence and Raman studies of Xe ion-implanted diamonds: Dependence on implantation dose[J].Journal of Luminescence,2009,129:1524-1526.

[4] [4] Aharonvich I, Greentree A D. Diamond photonics[J].Nature Photon,2011,5(7):397-405.

          Aharonvich I, Greentree A D. Diamond photonics[J].Nature Photon,2011,5(7):397-405.

[5] [5] Cardona M. Superconductivity in diamond, electron-phonon interaction and the zero-point renormalization of semiconducting gaps[J].Science and Technology of Advanced Materials,2006,7:S60-S66.

          Cardona M. Superconductivity in diamond, electron-phonon interaction and the zero-point renormalization of semiconducting gaps[J].Science and Technology of Advanced Materials,2006,7:S60-S66.

[6] [6] Klein T, Achatz P. Metal-insulator transition and superconductivity in boron-doped diamond[J].Physical Review B,2007,75:165313.

          Klein T, Achatz P. Metal-insulator transition and superconductivity in boron-doped diamond[J].Physical Review B,2007,75:165313.

[7] [7] Ekinov E A, Sidorov V A, Bauer E D, et al. Superconductivity in diamond[J].Nature,2004,428:542-545.

          Ekinov E A, Sidorov V A, Bauer E D, et al. Superconductivity in diamond[J].Nature,2004,428:542-545.

[8] [8] Ynsa M D, Agulló R F, Gordillo N, et al. Study of the effects of focused high-energy boron ion implantation in diamond[J].Nuclear Instruments and Methods in Physics Research B,2017,404: 207-210.

          Ynsa M D, Agulló R F, Gordillo N, et al. Study of the effects of focused high-energy boron ion implantation in diamond[J].Nuclear Instruments and Methods in Physics Research B,2017,404: 207-210.

[9] [9] Koichi U, Ken J W, Toshihiro A, et al. Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond[J].Diamond & Related Materials,1998,7:1719-1722.

          Koichi U, Ken J W, Toshihiro A, et al. Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond[J].Diamond & Related Materials,1998,7:1719-1722.

[10] [10] Steeds J W, Gilmore A, Charles S, et al. Use of nowel methods for the investigation of the boron distribution in CVD diamond[J].Acta Materialia,1999,47:4025-4030.

          Steeds J W, Gilmore A, Charles S, et al. Use of nowel methods for the investigation of the boron distribution in CVD diamond[J].Acta Materialia,1999,47:4025-4030.

[11] [11] Zhang B, Wang X, He J, et al. Electroluminescence of boron doped diamond thin films[J].Chinese Physics Letters,1996,13(7):455-457.

          Zhang B, Wang X, He J, et al. Electroluminescence of boron doped diamond thin films[J].Chinese Physics Letters,1996,13(7):455-457.

[12] [12] Woods G S, Lang A R. Cathodoluminescence optical absorption and X-ray topographic studies of synthetic diamond[J].Journal of Crystal Growth,1975,28(2):215-226.

          Woods G S, Lang A R. Cathodoluminescence optical absorption and X-ray topographic studies of synthetic diamond[J].Journal of Crystal Growth,1975,28(2):215-226.

[13] [13] Wang K, Steeds J W, Li Z, et al. Photoluminescence studies of growth sector dependence of nitrogen distribution in synthetic Ib diamond[J]. Materials Characterization,2014,94:14-18.

          Wang K, Steeds J W, Li Z, et al. Photoluminescence studies of growth sector dependence of nitrogen distribution in synthetic Ib diamond[J]. Materials Characterization,2014,94:14-18.

[14] [14] Mainwood A, Stoneham A M. Stability of electronic states of the vacancy in diamond[J]. Journal of Physics Condensed Matter,1997,9(11):2453-2464.

          Mainwood A, Stoneham A M. Stability of electronic states of the vacancy in diamond[J]. Journal of Physics Condensed Matter,1997,9(11):2453-2464.

[15] [15] Davies G, Campbell B, Mainwood A, et al. Interstitials, vacancies and lmpurities in Diamond[J].Physica Status Solidi A,2001,186(a):187.

          Davies G, Campbell B, Mainwood A, et al. Interstitials, vacancies and lmpurities in Diamond[J].Physica Status Solidi A,2001,186(a):187.

[16] [16] Steeds J W, Wang K, Li Z. Erasable optical data storage in diamond with room temperature read-out and other photochromic and thermochromic properties of diamond[J].Diamond & Related Materials,2012,23:154-156.

          Steeds J W, Wang K, Li Z. Erasable optical data storage in diamond with room temperature read-out and other photochromic and thermochromic properties of diamond[J].Diamond & Related Materials,2012,23:154-156.

[17] [17] Goss J P, Jones R, Shaw T D, et al. First principles study of the self-interstitial in diamond[J].Physica Status Solidi (a),2001,186(2):215-220.

          Goss J P, Jones R, Shaw T D, et al. First principles study of the self-interstitial in diamond[J].Physica Status Solidi (a),2001,186(2):215-220.

[18] [18] Wang K, Steeds J W, Li Z, et al. Annealing and lateral migration of defects in IIa diamond created by near-threshold electron irradiation[J].Applied Physics Letters,2017,110(15):68-73.

          Wang K, Steeds J W, Li Z, et al. Annealing and lateral migration of defects in IIa diamond created by near-threshold electron irradiation[J].Applied Physics Letters,2017,110(15):68-73.

[19] [19] Charles S J, Steeds J W, Butler J E, et al. Optical centers introduced in boron-doped synthetic diamond by nearthreshold electron irradiation[J].Journal of Applied Physics,2003,94(5):3091-3100.

          Charles S J, Steeds J W, Butler J E, et al. Optical centers introduced in boron-doped synthetic diamond by nearthreshold electron irradiation[J].Journal of Applied Physics,2003,94(5):3091-3100.

[20] [20] Steeds J W, Charles S J, Davies J, et al. Photoluminescence microscopy of TEM irradiated diamond[J].Diamond & Related Materials,2000,9(3):397-403.

          Steeds J W, Charles S J, Davies J, et al. Photoluminescence microscopy of TEM irradiated diamond[J].Diamond & Related Materials,2000,9(3):397-403.

[21] [21] Steeds J W, Charles S J, Gilmore A C, et al. Extended and point defects in diamond studied with the aid of various forms of microscopy[J].Microscopy & Microanalysis,2000,6(4):285-290.

          Steeds J W, Charles S J, Gilmore A C, et al. Extended and point defects in diamond studied with the aid of various forms of microscopy[J].Microscopy & Microanalysis,2000,6(4):285-290.

[22] [22] Yelisseyev A, Yu B, Nadolinny V, et al. Spectroscopic study of HPHT synthetic diamonds, as grown at 1500℃[J].Diamond & Related Materials,2002,11(1):22-37.

          Yelisseyev A, Yu B, Nadolinny V, et al. Spectroscopic study of HPHT synthetic diamonds, as grown at 1500℃[J].Diamond & Related Materials,2002,11(1):22-37.

[23] [23] Steeds J W. Orientation dependence of near-threshold damage production by electron irradiation of 4H SiC and diamond and outward migration of defects[J].Nuclear Instruments and Methods in Physics Research B,2011,269:1702-1706.

          Steeds J W. Orientation dependence of near-threshold damage production by electron irradiation of 4H SiC and diamond and outward migration of defects[J].Nuclear Instruments and Methods in Physics Research B,2011,269:1702-1706.