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Acta Optica Sinica, Volume. 38, Issue 5, 0514005(2018)

Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser

Yuan Dong1,2, Di Wang1, Zhi Wei1, and Tairan Fu、*
Author Affiliations
  • 1 Jilin Key Laboratory of Solid Laser Technology and Application, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 1 Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO 2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing 100084, China
  • 2 Jilin Key Laboratory of Solid Laser Technology and Application, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    Theoretical model of Si-APD irradiated by long-pulse laser

    Fig. 1. Theoretical model of Si-APD irradiated by long-pulse laser

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    Relationship between temperature of Si-APD surface center and time. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms

    Fig. 2. Relationship between temperature of Si-APD surface center and time. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms

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    Relationship between Si-APD surface center point temperature and radial position at characteristic moments with specific energy density. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms

    Fig. 3. Relationship between Si-APD surface center point temperature and radial position at characteristic moments with specific energy density. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms

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    Diagram of experimental setup of Si-APD irradiated by long-pulse laser

    Fig. 4. Diagram of experimental setup of Si-APD irradiated by long-pulse laser

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    Relationship between temperature of Si-APD surface center point irradiated by long-pulse laser and time with different pulse widths. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms

    Fig. 5. Relationship between temperature of Si-APD surface center point irradiated by long-pulse laser and time with different pulse widths. (a) τ=1.0 ms; (b) τ=1.5 ms; (c) τ=2.0 ms; (d) τ=3.0 ms

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    Yuan Dong, Di Wang, Zhi Wei, Tairan Fu. Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser[J]. Acta Optica Sinica, 2018, 38(5): 0514005

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Nov. 17, 2017

    Accepted: --

    Published Online: Jul. 10, 2018

    The Author Email: Fu Tairan ( trfu@mail.tsinghua.edu.cn)

    DOI:10.3788/AOS201838.0514005

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology