Acta Optica Sinica, Volume. 38, Issue 5, 0514005(2018)
Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser
The change of temperature rise caused by 1064 nm long-pulse laser irradiation on Si avalanche photodiode (Si-APD) is studied theoretically and experimentally. Considering the Si-APD multilayer structure, we establish a two-dimensional axisymmetric heat conduction model, and simulations under different conditions are carried out. We carry out the experimental study on temperature rise of Si-APD irradiated by long-pulse laser. The simulation results are consistent with the experimental results, which shows that the temperature rise caused by the interaction between long-pulse laser and Si-APD is determined by the energy density and pulse width of incident laser.
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Yuan Dong, Di Wang, Zhi Wei, Tairan Fu. Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser[J]. Acta Optica Sinica, 2018, 38(5): 0514005
Category: Lasers and Laser Optics
Received: Nov. 17, 2017
Accepted: --
Published Online: Jul. 10, 2018
The Author Email: Fu Tairan ( trfu@mail.tsinghua.edu.cn)