Journal of Synthetic Crystals, Volume. 49, Issue 5, 815(2020)

Process of Improving the Change Rate at High and Low Temperature Current Amplification Factor of Silicon Power Transistor

MA Fei1... GUI Xiangquan2 and LI Li2 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
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    References(5)

    [1] [1] Fardi H Z. Modeling dc gain performance of 4H-SiC BJTs[J].Compel International Journal of Computations & Mathematics in Electrical,2007,26(5): 1236-1246.

    [7] [7] Klaassen D B M. A unified mobility model for device simulation-I. Model equations and concentration dependence[J].Solid-State Electronics,1992,35(7): 953-959.

    [8] [8] Klaassen D B M. A unified mobility model for device simulation-II. Temperature dependence of carrier mobility and lifetime[J].Solid-State Electronics,1992,35(7): 961-967.

    [9] [9] Arkhipov V I, Emelianova E V, Heremans P, et al. Analytic model of carrier mobility in doped disordered organic semiconductors[J].Physical Review B,2005,72(23): 235202.

    [10] [10] Adler M S, Possin G E. Achieving accuracy in transistor and thyristor modeling[J].Electron Devices IEEE Transactions On,1981,28(9): 1053-1059.

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    MA Fei, GUI Xiangquan, LI Li. Process of Improving the Change Rate at High and Low Temperature Current Amplification Factor of Silicon Power Transistor[J]. Journal of Synthetic Crystals, 2020, 49(5): 815

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    Paper Information

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    Received: --

    Accepted: --

    Published Online: Aug. 6, 2020

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    CSTR:32186.14.

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