Journal of Synthetic Crystals, Volume. 49, Issue 5, 815(2020)
Process of Improving the Change Rate at High and Low Temperature Current Amplification Factor of Silicon Power Transistor
[1] [1] Fardi H Z. Modeling dc gain performance of 4H-SiC BJTs[J].Compel International Journal of Computations & Mathematics in Electrical,2007,26(5): 1236-1246.
[7] [7] Klaassen D B M. A unified mobility model for device simulation-I. Model equations and concentration dependence[J].Solid-State Electronics,1992,35(7): 953-959.
[8] [8] Klaassen D B M. A unified mobility model for device simulation-II. Temperature dependence of carrier mobility and lifetime[J].Solid-State Electronics,1992,35(7): 961-967.
[9] [9] Arkhipov V I, Emelianova E V, Heremans P, et al. Analytic model of carrier mobility in doped disordered organic semiconductors[J].Physical Review B,2005,72(23): 235202.
[10] [10] Adler M S, Possin G E. Achieving accuracy in transistor and thyristor modeling[J].Electron Devices IEEE Transactions On,1981,28(9): 1053-1059.
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MA Fei, GUI Xiangquan, LI Li. Process of Improving the Change Rate at High and Low Temperature Current Amplification Factor of Silicon Power Transistor[J]. Journal of Synthetic Crystals, 2020, 49(5): 815