Journal of Terahertz Science and Electronic Information Technology , Volume. 18, Issue 2, 318(2020)

Performance improvements through gate process optimization for GaN HEMTs

KONG Xin1, CHEN Yongbo1, DONG Ruoyan2, LIU An2, and WANG Changsi1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(41)

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    KONG Xin, CHEN Yongbo, DONG Ruoyan, LIU An, WANG Changsi. Performance improvements through gate process optimization for GaN HEMTs[J]. Journal of Terahertz Science and Electronic Information Technology , 2020, 18(2): 318

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    Paper Information

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    Received: Nov. 5, 2018

    Accepted: --

    Published Online: May. 28, 2020

    The Author Email:

    DOI:10.11805/tkyda208341

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