Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Optoelectronics Letters, Volume. 14, Issue 3, 214(2018)

Structure and photoluminescence properties of InN films grown on porous silicon by MOCVD

Jun WANG and Hong-yan and ZHANG
Author Affiliations
  • School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
    • show less
    Abstract
    Figures&Tables (0)
    Equations (0)
    References (20)
    Tools
    Paper Information
    Topics
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    WANG Jun, and ZHANG Hong-yan. Structure and photoluminescence properties of InN films grown on porous silicon by MOCVD[J]. Optoelectronics Letters, 2018, 14(3): 214

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: Materials

    Received: Jan. 16, 2017

    Accepted: --

    Published Online: Sep. 15, 2018

    The Author Email:

    DOI:10.1007/s11801-017-7013-x

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology