Fig. 1. Carrier concentration distribution of the laser at 500 mA injection current

Fig. 2. Field distribution and effective refractivity parameter of laser

Fig. 3. Internal loss changes with W of the P-waveguide layer, doping concentration of P-cladding layer, and waveguide layer

Fig. 4. Schematic for optimizing doping concentration in waveguide and laser structures

Fig. 5. Simulation of electron and hole concentration distributions of lasers with different structures at same injection current. (a) Electron concentration distribution; (b) hole concentration distribution

Fig. 6. Current density distributions in vertical direction. (a) Electron; (b) hole

Fig. 7. Experimental results. (a) Internal loss and internal quantum efficiency versus doping concentration of P-cladding layer; (b) internal loss and internal quantum efficiency versus Al composition of different Al_XGa_1－XAs materials

Fig. 8. Room temperature PL spectrum of FP laser

Fig. 9. Spectrogram of FP laser

Fig. 10. Cross section of the FP laser

Fig. 11. Relationship between cavity length and inverse external differential efficiency

Fig. 12. Experimental and theoretical results of optical and electrical characteristics

Fig. 13. Current density distribution diagrams with different structures in epitaxial direction. (a) Electron; (b) hole

Fig. 14. Far-field test results. (a) Direction of divergence angle of fast axis; (b) direction of divergence angle of slow axis