A novel SiC high-<i>k</i> superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance

Moufu Kong; Zewei Hu; Ronghe Yan; Bo Yi; Bingke Zhang; Hongqiang Yang

doi:10.1088/1674-4926/44/5/052801

Journal of Semiconductors, Volume. 44, Issue 5, 052801(2023)

A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance

Moufu Kong^1、*, Zewei Hu¹, Ronghe Yan¹, Bo Yi¹, Bingke Zhang², and Hongqiang Yang^1、**

Author Affiliations

¹State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China, Chengdu 610054, China

²Power Semiconductor Research Institute, Beijing Institute of Smart Energy, Beijing 102209, China

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References(45)

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Moufu Kong, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang. A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance[J]. Journal of Semiconductors, 2023, 44(5): 052801

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Paper Information

Category: Articles

Received: Oct. 28, 2022

Accepted: --

Published Online: Jun. 15, 2023

The Author Email: Kong Moufu (kmf@uestc.edu.cn), Yang Hongqiang (hqyang@uestc.edu.cn)

DOI:10.1088/1674-4926/44/5/052801

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