[1] [1] Sun X X, Wang Z X, Liu X Z, et al. Minority carrier characteristics simulation of MPS diodes[J]. Semiconductor Technology, 2019, 44(4): 270-275, 285.

[2] [2] Yin H, Hong Z Y, Ding C Y. Research of performance test system of avalanche diode[J]. Chinese Journal of Quantum Electronics, 2020, 37(3): 321-327.

[3] [3] Huang Y, Wachutka G. Comparative study of contact topographies of 4.5 kV SiC MPS diodes for optimizing the forward characteristics[C]. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, 2016, 201: 117-120.

[4] [4] Niwa H, Suda J, Kimoto T. Ultrahigh-voltage SiC MPS diodes with hybrid unipolar/bipolar operation[J]. IEEE Transactions on Electron Devices, 2017, 3: 874-881.

[5] [5] Tang W H, Fang H, Li F S, et al. Theoretical research of electronic structure and optical properties of Al-doped TiO2 crystalline materials[J]. Chinese Journal of Quantum Electronics, 2019, 36(1): 116-122.

[6] [6] Yu X X, Zhou J J, Wang Y F, et al. Study on high current density diamond Schottky barrier diode[J]. Chinese Journal of Research and Development of Solid State Electronics, 2019, 39(2): 77-80, 85.

[7] [7] Li Y P, Li Y F, He Z R, et al. Research progress of Schottky contact barrier model of metal and semiconductor and its carrier transport mechanism[J]. Chinese Journal of Materials Review, 2017, 31(3): 57-62.

[8] [8] Wu H, Kang X W, Yang B, et al. Forward current transport mechanism of recess-free AlGaN/GaN Schottky barrier diodes[J]. Chinese Journal of Semiconductor Technology, 2019, 44(6): 426-432.

[9] [9] Cuong V V, Ishikawa S, Maeda T, et al. High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications[J]. Thin Solid Films, 2019, 669: 306-314.

[10] [10] Palenskis V, Glemza J, Vysniauskas J, et al. Carrier density and mobility fluctuations due to carrier retrapping process in homogeneous semiconductors[C]. International Conference on Noise and Fluctuations (ICNF), Vilnius, 2017.

[11] [11] Nipoti R, Ayedh H M, Svensson B G. Defects related to electrical doping of 4h-sic by ion implantation[J]. Materials Science in Semiconductor Processing, 2017, 78: 13-21.

[12] [12] Ahaitouf A, Srour H, Hamady S O S, et al. Interface state effects in GaN Schottky diodes[J]. Thin Solid Films, 2012, 522: 345-351.

[13] [13] Kim S, Kim H K, Jeong S, et al. Carrier transport mechanism of Al contacts on n-type 4H-SiC[J]. Materials Letters, 2018, 228: 232-234.

[14] [14] Mamor M. Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts[J]. Journal of Physics, Condensed Matter, 2009, 21(33): 335802.