Acta Physica Sinica, Volume. 69, Issue 14, 146101-1(2020)

Application of Ge50Te50/Zn15Sb85 nanocomposite multilayer films in high thermal stability and low power phase change memory

Xiao-Qin Zhu and Yi-Feng Hu*
Author Affiliations
  • School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China
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    Figures & Tables(4)
    Resistance vs. temperature of GT/ZS nanocomposite multilayer films.
    Failure time vs. 1/(kBT) GT/ZS nanocomposite multilayer films.
    The high-resolution transmission electron microscopy images (a) (b) and selected area electron diffraction diagrams (c) (d) of section for [GT(7 nm)/ZS(3 nm)]5 multilayer composite film: (a), (c) Amorphous; (b), (d) crystalline.
    (a) The cross section diagram of PCM devices cell; the curves of (b) I-V, (c) R-V, (d) cycling performance for PCM device based on [GT(7 nm)/ZS(3 nm)]5 multilayer composite film.
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    Xiao-Qin Zhu, Yi-Feng Hu. Application of Ge50Te50/Zn15Sb85 nanocomposite multilayer films in high thermal stability and low power phase change memory [J]. Acta Physica Sinica, 2020, 69(14): 146101-1

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    Paper Information

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    Received: Apr. 6, 2020

    Accepted: --

    Published Online: Dec. 28, 2020

    The Author Email:

    DOI:10.7498/aps.69.20200502

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