Ultrafast Carrier Dynamics in n-Type and Semi-Insulating 6H-SiC Crystals

Yao Nie; Youyun Wang; Xueqin Wu; Yu Fang

doi:10.3788/LOP56.063201

Laser & Optoelectronics Progress, Volume. 56, Issue 6, 063201(2019)

Ultrafast Carrier Dynamics in n-Type and Semi-Insulating 6H-SiC Crystals

Yao Nie, Youyun Wang, Xueqin Wu, and Yu Fang^*

Author Affiliations

School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China

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Figures & Tables(7)

Fig. 1. Experimental light path diagram of femtosecond TAS

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Fig. 2. Linear absorption spectra of n-type (N-doped) and SI (V-doped) 6H-SiC wafers

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Fig. 3. Transient absorption spectra under different time delays. (a) n-6H-SiC; (b) SI-6H-SiC

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Fig. 4. Time-resolved transient absorption (TRTA) responses for typical probe wavelengths. (a) n-6H-SiC; (b) SI-6H-SiC

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Fig. 5. Schematic of energy band and carrier relaxation in 6H-SiC wafers under pump excitation at 3.4 eV

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Table 1. Common impurity concentrations in 6H-SiC samples determined by SIMS1017 cm-3
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Table 1. Common impurity concentrations in 6H-SiC samples determined by SIMS1017 cm-3
6H-SiC N V B Al
n-type 92 0.5 2.3 6.7
SI 12 2.0 2.9 6.6

Table 2. Photo-physical parameters obtained by measuring and fitting of TAS responses of different 6H-SiC wafers
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Table 2. Photo-physical parameters obtained by measuring and fitting of TAS responses of different 6H-SiC wafers
6H-SiC τ₁ /ps τ₂ /ps τ₃ /ns σ_m /(10^-17cm²)
n-type 2.0±0.5 189±25 16±4 About 6
SI 3.8±1.3 163±22 8±2 About 5

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Yao Nie, Youyun Wang, Xueqin Wu, Yu Fang. Ultrafast Carrier Dynamics in n-Type and Semi-Insulating 6H-SiC Crystals[J]. Laser & Optoelectronics Progress, 2019, 56(6): 063201

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Paper Information

Category: Ultrafast Optics

Received: Sep. 25, 2018

Accepted: Oct. 10, 2018

Published Online: Jul. 30, 2019

The Author Email: Fang Yu (yufang@usts.edu.cn)

DOI:10.3788/LOP56.063201

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Common impurity concentrations in 6H-SiC samples determined by SIMS1017 cm-3

Table 1. Common impurity concentrations in 6H-SiC samples determined by SIMS1017 cm-3

Table 2. Photo-physical parameters obtained by measuring and fitting of TAS responses of different 6H-SiC wafers

Table 2. Photo-physical parameters obtained by measuring and fitting of TAS responses of different 6H-SiC wafers