Semiconductor Optoelectronics, Volume. 43, Issue 3, 466(2022)

Design of Novel Vertical GaNBased Trench Gate MOSFET with Electric Field Shielding Function of Gate Dielectric

LI Chenglang1... WU Qianshu1, ZHOU Yuhao1, ZHANG Jinwei1, LIU Zhenxing1, ZHANG Qi1, and LIU Yang1,23 |Show fewer author(s)
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    References(21)

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    LI Chenglang, WU Qianshu, ZHOU Yuhao, ZHANG Jinwei, LIU Zhenxing, ZHANG Qi, LIU Yang. Design of Novel Vertical GaNBased Trench Gate MOSFET with Electric Field Shielding Function of Gate Dielectric[J]. Semiconductor Optoelectronics, 2022, 43(3): 466

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    Paper Information

    Special Issue:

    Received: Jun. 2, 2022

    Accepted: --

    Published Online: Aug. 1, 2022

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2022060201

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