Journal of Semiconductors, Volume. 41, Issue 7, 072902(2020)
Metal–insulator transition in few-layered GaTe transistors
Fig. 1. (Color online) Characterizations of GaTe and a typical BN/GaTe/BN device. (a) Schematic of GaTe layered lattice, with the interlayer spacing of ~0.8 nm. (b) Schematic illustration of the device. (c) Optical micrograph of the device, the scale bar is 10
Fig. 2. (Color online) Electrical transport properties of BN/GaTe/BN devices at room temperature. (a) Field effect curve at
Fig. 3. (Color online) Transport properties of BN/GaTe/BN devices at different temperatures. (a) Color map of
Fig. 4. (Color online) Temperature-dependent transport characteristics in few-layered GaTe device with a constant voltage
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Xiuxin Xia, Xiaoxi Li, Hanwen Wang. Metal–insulator transition in few-layered GaTe transistors[J]. Journal of Semiconductors, 2020, 41(7): 072902
Category: Articles
Received: Mar. 27, 2020
Accepted: --
Published Online: Sep. 10, 2021
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